20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376*2922 (212)227-6005 fax: (973) 376-8960 pnp bd132 npnBD131 silicon planar epitaxial power transistors the bd132are pnn transistors mounted in jedec to-126 plastic package. medium power applications. npn complements are BD131 . absolute maximum ratings symbol -vceo -vcbo -vebo ratings collector-emitter voltage collector-base voltage emitter-base voltage value 45 45 4 unit v v v symbol i lc i ib pt ratings -ir -low base current (peak value) -ibm reverse base current (peak value) +|bm total power dissipation ; @ tmb = 60c value 3 6 0.5 0.5 15 unit watts tj tstg junction temperature storage temperature 150 -65 to +150 c c thermal characteristics symbol rthj-mb ratings thermal resistance, junction to mouting base value 6 unit km/ nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility tor any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
pnp bd132 npnBD131 electrical characteristics tc=25c unless otherwise noted symbol i -icbo -'ebo ratings emitter cut-offcurrent test condition(s) ie=0 , -vcb=40 v |e=0,-vcb=40v,ti= 150c |c=0, -veb=3 v min - - - typ - - - mx 5 500 5 unit 1 1 a |ja ma -vce(sat) ?vbe |
